document number: 94110 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 15-nov-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 schottky rectifier, 1.0 a vs-10bq015pbf vishay semiconductors features ? ultralow forward voltage drop ? optimized for or-ing applications ? guard ring for enhanced ruggedness and long term reliability ? 125 c t j operation (v r < 5 v) ? high frequency operation ? high purity, high temperatu re epoxy encapsulation for enhanced mechanical strength and moisture resistance ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level description the vs-10bq015pbf surface mount schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on pc boards. the proprietary barrier technology allows for reliable operation up to 125 c junction temperature. typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and re verse battery protection. product summary package smb (do-214aa) i f(av) 1 a v r 15 v v f at i f 0.32 v i rm 12 ma at 100 c t j max. 125 c diode variation single die e as 1 mj cathode anode s mb major ratings and characteristics symbol characteristics values units i f(av) rectangular waveform 1.0 a v rrm 15 v i fsm t p = 5 s sine 140 a v f 1.0 apk, t j = 125 c 0.32 v t j range - 55 to 125 c voltage ratings parameter symbol vs-10bq015pbf units maximum dc reverse voltage v r 15 v maximum working peak reverse voltage v rwm 25 absolute maximum ratings parameter symbol test conditions values units maximum average forward current see fig. 5 i f(av) 50 % duty cycle at t l = 84 c, rectangular waveform 1.0 a maximum peak one cycle non-repetitive surge current see fig. 7 i fsm 5 s sine or 3 s rect. pulse following any rated load condition and with rated v rrm applied 140 a 10 ms sine or 6 ms rect. pulse 40 non-repetitive avalanche energy e as t j = 25 c, i as = 1 a, l = 2 mh 1.0 mj repetitive avalanche current i ar current decaying linea rly to zero in 1 s frequency limited by t j maximum v a = 1.5 x v r typical 1.0 a
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94110 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 15-nov-10 vs-10bq015pbf vishay semiconductors schottky rectifier, 1.0 a note (1) pulse width < 300 s, duty cycle < 2 % notes (1) thermal runaway condition fo r a diode on its own heatsink (2) mounted 1" square pcb electrical specifications parameter symbol test conditions values units maximum forward voltage drop see fig. 1 v fm (1) 1 a t j = 25 c 0.35 v 2 a 0.44 1 a t j = 125 c 0.32 2 a 0.40 maximum reverse leakage current see fig. 2 i rm (1) t j = 25 c v r = rated v r 0.5 ma t j = 100 c 12 threshold voltage v f(to) t j = t j maximum -v forward slope resistance r t -m ? typical junction capacitance c t v r = 5 v dc , (test signal range 100 khz to 1 mhz), 25 c 390 pf typical series inductance l s measured lead to lead 5 mm from package body 2.0 nh maximum voltage rate of change dv/dt rated v r 10 000 v/s thermal - mechanical specifications parameter symbol test conditions values units maximum junction temperature range t j (1) - 55 to 125 c maximum storage temperature range t stg - 55 to 150 maximum thermal resistance, junction to lead r thjl (2) dc operation see fig. 4 36 c/w maximum thermal resistance, junction to ambient r thja dc operation 80 approximate weight 0.10 g 0.003 oz. marking device case style smb (similar to do-214aa) v1c dp tot dt j ------------- 1 r thja -------------- <
document number: 94110 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 15-nov-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 vs-10bq015pbf schottky rectifier, 1.0 a vishay semiconductors fig. 1 - maximum forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics (per leg) 10 1 v fm - forward voltage drop (v) i f - instantaneous forward current (a) 0 0.1 0.2 0.4 0.6 0.8 1.0 t j = 100 c t j = 75 c t j = 25 c 94110_01 10 1 0.1 v r - reverse voltage (v) i r - reverse current (ma) 0 0.01 15 312 t j = 100 c t j = 75 c t j = 50 c t j = 25 c 69 94110_02 1000 100 v r - reverse voltage (v) c t - junction capacitance (pf) 0 10 15 312 69 t j = 25 c 94110_03 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 s ingle pul s e (thermal re s i s tance) . p dm t 1 t 2 note s : 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c 100 94110_04 d = 0.75 d = 0.50 d = 0.33 d = 0.25 d = 0.20
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94110 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 15-nov-10 vs-10bq015pbf vishay semiconductors schottky rectifier, 1.0 a fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - maximum non- repetitive surge current note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 80 % rated v r i f(av) - average forward current (a) allowable case temperature (c) 40 60 80 100 0 0.3 0.6 0.9 1.2 1.5 see note (1) dc square wave (d = 0.50) 80 % rated v r applied 94110_05 i f(av) - average forward current (a) average power loss (w) 0 0.1 0.2 0.3 0.4 0.5 0 0.3 0.6 0.9 1.2 1.5 d = 0.20 d = 0.25 d = 0.33 d = 0.50 d = 0.75 rms limit dc 94110_06 t p - square wave pulse duration (s) 100 1000 i fsm - non-repetitive surge current (a) 10 100 1000 10 000 at any rated load condition and with rated v rrm applied following surge 10 94110_07
document number: 94110 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 15-nov-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 vs-10bq015pbf schottky rectifier, 1.0 a vishay semiconductors ordering information table 2 - current rating 3 - b = single lead diode 4 - q = schottky ?q? series 5 - voltage rating (015 = 15 v) 6 - none = box (1000 pieces) tr = tape and reel (3000 pieces) - pbf = lead (pb)-free 7 device code 5 13 24 67 vs- 10 b q 015 tr pbf 1 - hpp product suffix links to related documents dimensions www.vishay.com/doc?95017 part marking information www.vishay.com/doc?95029 packaging information tape and reel www.vishay.com/doc?95034 bulk www.vishay.com/doc?95397 spice model www.vishay.com/doc?95355
document number: 95017 for technical questions concer ning discrete products, cont act: diodes-tech@vishay.com www.vishay.com revision: 25-jun-07 for technical qu estions concerning module products , contact: ind-modules@vishay.com 1 smb outline dimensions vishay high power products dimensions in millimeters (inches) 3.80 (0.150) 3.30 (0.130) 4.70 (0.185) 4.10 (0.161) 2.15 (0.085) 1.80 (0.071) 2.40 (0.094) 1.90 (0.075) 1.30 (0.051) 0.76 (0.030) 0.30 (0.012) 0.15 (0.006) 5.60 (0.220) 5.00 (0.197) 4.0 (0.157) 2.0 typ. (0.079 typ.) 2.5 typ. (0.098 typ.) soldering pad 1 2 1 2 polarity part number 4.2 (0.165)
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